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WEBScientists find new way to make efficient perovskite LEDs. Irradiation-hardened GaN HEMTs. Technique offers fast, large-area deposition of 2D films. WHU team takes inspiration from moths to boost GaN LEDs. Wet chemical etching for defect-free AlGaInP red micro-LEDs. Raising the bar for β-Ga₂O₃ diodes.
A game changer: Epitaxially grown nitride ferroelectrics
WEBA fundamental building block to fulfilling this goal is the epitaxial growth of nitride ferroelectrics. MOCVD and MBE are obvious options, given their success in high-throughput growth of many III-nitride device structures, such as LEDs, laser diodes and HEMTs. However, the growth of Sc-III-N by either MOCVD or MBE is extremely challenging.
Integrated photonic platforms - The case for SiC - News
WEBApr 22, 2024 · Remove from reading list. Integrated photonic platforms - The case for SiC. Monday 22nd April 2024. The potential of SiC integrated photonics is starting to be unleashed, thanks to the unique photonic properties of this material and the development of high-quality epitaxial growth. BY HAIYAN OU FROM THE …
Aehr wins major order for SiC wafer test and burn-in system
WEBApr 4, 2024 · Remove from reading list. Aehr wins major order for SiC wafer test and burn-in system. Thursday 4th April 2024. FOX-NP system, including the FOX WaferPak Aligner and initial WaferPaks, are scheduled to ship over the next few months. Aehr Test Systems, a Fremont-based supplier of semiconductor test and burn-in …
Bipolar p-FETs enable all-GaN power integration - News
WEBAug 20, 2024 · Bipolar transport overcomes the inherent barriers of GaN p-FETs to pave the way to higher current densities. GaN power devices have many attributes. They are renowned for their exceptional switching efficiency and high power density, strengths that are driving the development of miniaturised, energy-saving power systems.
New home for the Institute for Compound Semiconductors
WEBTuesday 23rd May 2023. Nobel-prize-winning climate scientist Donald Wuebbles opens Cardiff University’s Translational Research Hub, a new home for the Institute for Compound Semiconductors. BY RICHARD STEVENSON, EDITOR, CS MAGAZINE. One the cornerstones of the world’s first compound semiconductor cluster, situated in …
Gallium Semi unveils Philippines facility - News - Compound …
WEBFeb 15, 2023 · Gallium Semiconductor, a designer and manufacturer of GaN-based RF power transistor products, announces the opening of its cutting-edge manufacturing facility in Laguna, Philippines. The inauguration was held on February 3, 2023 and was led by Henk Thoonen, VP of Global Operations of Gallium Semi, and …
CS Mantech: Improving the capabilities of RF GaN - News
WEBJun 26, 2024 · At this year’s CS Mantech, Shigeki Yoshida from Sumitomo Electric Industries described efforts to combine both these valuable innovations. This team’s HEMTs, with an N-polar orientation and an InAlN barrier, are claimed to deliver a record-breaking power density of 12.8 W mm that in comparison, the output power of the company’s Ga-polar ...
Imec's GaN-on-silicon HEMTs target 5G base stations
WEBDec 14, 2023 · These GaN MISHEMT devices, featuring a relaxed gate length of 100 nm, demonstrate exceptional performance across various metrics. Specifically, for low-voltage (up to 10V) applications, these devices achieved a saturated output power (P) of 2.2W/mm (26.8 dBm) and a power added efficiency (PAE) of …
Korean team achieves stable 21.7% efficient perovskite cells
WEBFeb 29, 2024 · Perovskite solar cells achieve high power conversion energy but they also suffer from lead leakage and perovskite degradation due to moisture.
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