TriQuint Semiconductor has announced the availability of a new generation of high-voltage gallium arsenide (GaAs) power amplifier transistors designed to substantially increase the efficiency of 3G ...
Five building-block Freescale Semiconductor RF amplifiers that enhance performance in 3G/4G wireless communications systems are available that target macrocell down to picocell and femtocell base ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new 16W-average-power gallium nitride (GaN) power amplifier module (PAM) ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a world’s first compact 7GHz band gallium nitride (GaN) power amplifier module (PAM) with ...
Kyocera Corporation (President: Hideo Tanimoto) (TOKYO:6971) today announced that it has officially begun the full-scale development of an AI-powered 5G virtualized base station, with plans to ...