Using CMOS gates to generatepulses sometimes causes timinguncertainty due to gate-threshold variations.For accurate pulse widths, youcan use BJTs (bipolar-junction transistors).Basing the design on ...
High voltage nanosecond pulse generation using avalanche transistors represents a transformative avenue in the field of pulsed power technology. Exploiting the intrinsic properties of avalanche ...
Download this article in PDF format. Switching losses are inevitable in any power device. But these losses can be minimized through optimization and rigorous measurement of design parameters related ...
A discovery that promises transistors – the fundamental part of all modern electronics – controlled by laser pulses that will be 10,000 faster than today’s fastest transistors has been made by a ...
Ampleon has launched four 700-W GaN-on-SiC RF transistors for S-band radar systems, operating between 2.7 GHz and 3.5 GHz. The CLS3H2731 and CLS3H3135 series leverage a radar-optimized GaN-on-SiC ...
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