MALVERN, Pa., Dec. 04, 2024 (GLOBE NEWSWIRE) -- To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 40 V ...

Vishay reports that the SiA446DJ 150-V DS N-channel MOSFET offers the industry’s lowest on-resistance at 10 V in the 2×2-mm footprint of its thermally enhanced PowerPAK SC-70 package. The MOSFET’s ...

Fabricated with Toshiba’s U-MOS X-H process, the 100-V TPH3R10AQM N-channel power MOSFET provides low on-resistance and an expanded safe operating area. The device has a maximum drain-source ...

Vishay Intertechnology, Inc. introduced a new TrenchFET® 20 V n-channel MOSFET designed to save space, decrease power consumption, and extend battery usage in wearable devices, smartphones, tablets, ...

MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...

Nexperia has further extended its NextPower 80 V and 100 V MOSFET portfolio with the release of several new LFPAK devices in industry-standard 5x6 mm and 8x8 mm footprints. These new NextPower 80/100 ...

Dual Device With Integrated Schottky Diode Increases Power Density and Efficiency, Needs 65 % Less PCB Space Than 6 mm x 5 mm Packages MALVERN, Pa., July 08, 2020 (GLOBE NEWSWIRE) -- Vishay ...

A new 20-V p-channel TrenchFET Gen III MOSFET offers the lowest on-resistance available in the PowerPAK 1212-8 package, according to the company. The Si7615DN has an R DS(ON) of 3.9 mO at 10 V, 5.5 mO ...

Space-Saving Device Features BWL Design and High I D to 795 A to Increase Power Density, While Low R thJC of 0.21 °C/W Improves Thermal Performance MALVERN, Pa., Dec. 04, 2024 (GLOBE NEWSWIRE) -- To ...

Space-Saving Device Offers Low Max. R thJC of 0.36 °C/W and Wettable Flanks to Improve Thermal Performance and Solderability in Industrial Applications MALVERN, Pa., May 21, 2025 (GLOBE NEWSWIRE) -- ...